For the semiconductor manufacturing processes, metal corrosion by halogen elements (e.g. fluorine, chlorine, and bromine) is always a critical issue. For the aluminum back-end-of-processes, these halogen elements tend to form aluminum halide defects on the surface of aluminum pads or aluminum metal wires, which can directly lead to the failure and reliability issues of the devices. While there have been some reports on the analysis and mechanisms of fluorine and chlorine pollution and their aluminum halide defects, there is a lack of research on the analysis and mechanism studies of bromine (Br) contamination and its associated aluminum bromide defects. In this work, we conducted the comprehensive study on Br-induced Al metal corrosion using Auger electron spectroscopy, scanning electron microscope and energy dispersive spectroscopy (SEM and EDS.  Our study indicated that the Br-induced defects primarily consist of aluminum tribromide (AlBr3) and aluminum oxobromide (AlXBrYOZ), which are formed through a series of physical and chemical reactions. We propose a chain chemical reaction mechanism that is closely linked to the chemical corrosion processes induced by bromine.

1. Y. N. Hua, S. Redkar, C. K. Lau, Z. Q. Mo; November 3–7, 2002. “A Study on Non-Stick Aluminium Bondpads Due to Fluorine Contamination Using SEM, EDX, TEM, IC, AUGER, XPS and TOF-SIMS Techniques.” Proceedings of the ISTFA 2002. ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis. Phoenix, Arizona, USA, pp. 495-504, 2002, DOI:10.31399/asm.cp.istfa2002p0495
2. Y. N. Hua, S. Redkar, Ron Dickinson, S. L. Peh, Shirley; November 2–6, 2003. “A Study on Fluorine-Induced Corrosion on Microchip Aluminum Bondpads.” Proceedings of the ISTFA 2003. ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis. Santa Clara, California, USA, pp. 249-255, 2003, DOI:10.31399/asm.cp.istfa2003p0249
3. Y. Hua, L. Liao, L. Binghai, L. Zhu and X. Li, “Failure Analysis & Mechanism Studies of the Worm-like Defects in Vias of Wafer Fabrication,” 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), Singapore, Singapore, pp. 50-52, 2021, doi: 10.1109/EPTC53413.2021.9663918.
4. Hua Younan, Liu Binghai, Mo Zhiqiang and J. Teong, “Studies and applications of standardless EDX quantification method in failure analysis of wafer fabrication,” 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, pp. 1-6, 2008, doi: 10.1109/IPFA.2008.4588206.
5. Y. Hua et al., “Studies of Determination Method of TiN Residue on Al Bondpads,” 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Pulau Pinang, Malaysia, pp. 1-4, 2023, doi: 10.1109/IPFA58228.2023.10249105.
6. M. A. Vyvoda, H. Lee, M. V. Malyshev, F. P. Klemens, M. Cerullo, V. M. Donnelly, D. B. Graves, A. Kornblit, J. T. C. Lee; Effects of plasma conditions on the shapes of features etched in Cl2 and HBr plasmas. I. Bulk crystalline silicon etching. Journal of Vacuum Science & Technology A, vol. 16, no. 6, pp. 3247–3258, 1998, DOI:10.1116/1.581530
7. W-H. Lo and W-C. Wang, “HBr Silicon Etching Process,” U.S. Patent 6,358,859 B1, (March 19. 2002). 8.
8. Hydrogen Bromide 4.5 [Specification sheet], Praxair, document EG 48–4.5 08/2003. 9.
9. Hydrogen Bromide [Specification sheet], Air Liquide America Specialty Gases

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